Elmer Ogryzlo
Profile
Name:
Elmer A Ogryzlo
Position Title:
Professor Emeritus
Research and Teaching Interests
The processing of semiconductors for the microelectronic industry remains an example of a discipline for which technology is leading science. There is a growing demand by the industry for processes which can yield components which are smaller, more densely packed and capable of greater electronic speed. The critical processes which limit development in this area are fine line anisotropic etching and the passivation of surfaces and interfaces. In response to these needs several processes which could be important to future developments in this technology are being studied. These include:
(a) the laser enhanced etching of gallium arsenide and silicon with chlorine, bromine and iodine molecules and atoms. These are seen as possible anisotropic etching techniques which avoid the component damage which is characteristic of current plasma-based techniques.
(b) the oxidation of silicon by atomic oxygen to form "gate oxides".
(c) the use of photoluminescence to monitor the passivation of III-V semiconductor surfaces and interfaces, and laser induced photconductivity to monitor the passivation level of silicon/silica interfaces.
(d) the processing and characterization of SiGex thin films for high-speed MOSFETs.
A diamond film deposited on silicon with a microwave discharge in a 1 torr methane/H2 mixture and a temperature of 800°C.
Contact
Real name:
Fax Number:
604-822-4750
Curriculum Vitae
B.Sc., University of Manitoba(1955); M.Sc. University of Manitoba (L,B.Funt, 1956) Ph.D., McGill University (H.I.Schiff, 1958); Postdoctoral, Scheffield University (Sir George Porter, 1958-59).
Publications
2000
Polarized Emission From Kcl : Eu2+ Single Crystals. Journal of Physics-Condensed Matter 2000, 12, 3485-3495.
1996
Monitoring Of The Formation And Removal Of Bulk, Surface, And Interfacial Carrier Traps On Silicon(100). Canadian Journal of Physics 1996, 74, S233-S238.
1995
In Situ Laser Beam Probes For Semiconductor Processing. In Application of Particle and Laser Beams in Materials Technology; ; Application of Particle and Laser Beams in Materials Technology; Kluwer Academic Publ: Dordrecht, 1995; Vol. 283, pp. 259-267.
Kinetic-Study Of The Effects Of H, O, N, S, No, No2 And O-2 On The Surface-States Of Ingaas And Gaas. Journal of the Chemical Society-Faraday Transactions 1995, 91, 3021-3026.
Evidence For Reversible Dissociative Adsorption In The Reaction Of Molecular Chlorine With Gallium-Arsenide. Canadian Journal of Chemistry-Revue Canadienne De Chimie 1995, 73, 735-739.
Kinetic-Study Of Atomic-Hydrogen Etching Of Gaas(100). Journal of Applied Physics 1995, 77, 2155-2159.
Characterization Of A Radiofrequency Discharge Used For Downstream Plasma Oxidation Of Si. Journal of Applied Physics 1995, 77, 1690-1695.
1994
Etching Of Gaas (100) With Gaseous H/ch3 Mixtures. International Journal of Chemical Kinetics 1994, 26, 131-140.
Room-Temperature Deposition Of Diamond-Like Carbon-Films By The Microwave Plasma-Jet Method. Diamond and Related Materials 1994, 3, 10-13.
1993
Dlc Films By Plasma-Assisted Chemical-Vapor-Deposition Near Room-Temperature. Diamond and Related Materials 1993, 2, 1483-1489.
The Etching Of Gallium-Arsenide With Iodine Monochloride. Journal of the Electrochemical Society 1993, 140, 226-229.
1992
Rate Constants For The Etching Of Gallium-Arsenide By Molecular-Iodine. Journal of Vacuum Science & Technology B 1992, 10, 668-674.
Low-Energy Carbon Ion-Bombardment On Indium-Phosphide And Its Implications For Alkane-Based Reactive Ion Etching. Journal of Applied Physics 1992, 71, 5623-5628.
Surface Damage And Deposition On Gallium-Arsenide Resulting From Low-Energy Carbon Ion-Bombardment. Surface Science 1992, 271, 468-476.
X-Ray Photoelectron Spectroscopic Study Of The Interaction Of Low-Energy Carbon-Ions With Gaas And Inp. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films 1992, 10, 1358-1364.
A Comparison Of 3 Techniques For Depositing Dlc Films At Temperatures Between 25-Degrees-C And 100-Degrees-C. Molecular Crystals and Liquid Crystals 1992, 219, 183-192.
1991
Rate Constants For The Etching Of Intrinsic And Doped Polycrystalline Silicon By Bromine Atoms. Journal of Applied Physics 1991, 69, 2635-2638.
Kinetics Of The Reaction Of Molecular Bromine With Doped Polycrystalline Silicon. Journal of the Electrochemical Society 1991, 138, 3050-3053.
Kinetics Of The Reactions Of Intrinsic And Phosphorus Doped Polycrystalline Silicon With Molecular Chlorine. Chemical Physics 1991, 153, 483-489.
Rate Constants For The Etching Of Gallium-Arsenide By Atomic Chlorine. Plasma Chemistry and Plasma Processing 1991, 11, 311-321.
Rate Constants For The Reaction Of Atomic And Molecular Bromine With Gallium-Arsenide. International Journal of Chemical Kinetics 1991, 23, 529-539.
Kinetics Of The Reaction Of Silicon With Gaseous Bromine. Journal of the Chemical Society-Faraday Transactions 1991, 87, 45-50.
Rate Constants For The Reaction Of Cl Atoms With Intrinsic And N+-Doped Polycrystalline Silicon. Journal of Applied Physics 1991, 69, 548-549.
1990
Deposition Of Diamond-Like Films By Laser Ablation. Surface & Coatings Technology 1990, 43-4, 80-87.
1988
Kinetics Of The Reaction Of Gallium-Arsenide With Molecular Chlorine. Journal of Chemical Physics 1988, 89, 2844-2847.
1986
The Formation Of O-2(Alpha-1-Delta-G) In Homogeneous And Heterogeneous Atom Recombination. Canadian Journal of Physics 1986, 64, 1614-1620.
1984
Orange Chemi-Luminescence From No2. Journal of Chemical Physics 1984, 80, 1-6.
Quenching Of The O-2 (Av=2-]Xv=5) Herzberg-I Band By O-2 (A) And O. Canadian Journal of Physics 1984, 62, 1599-1602.
The Yield Of O-2(B1-Sigma-G+) In Oxygen Atom Recombination. Journal of Photochemistry 1984, 25, 389-398.
1983
Quenching Of O-2(C1-Sigma-U-)Nu = O By O(P-3), O-2(A1-Delta-G), And Other Gases. Canadian Journal of Chemistry-Revue Canadienne De Chimie 1983, 61, 921-926.
Rate-Constant For The Deactivation Of O2(A 3-Sigma-U+) By N2. Chemical Physics Letters 1983, 103, 209-212.
1982
A Direct Determination Of The Rate-Constant For The Quenching Of O(S-1) By O-2 (A1-Delta-G). Journal of Photochemistry 1982, 18, 379-382.
1981
Excitation Of The Green Line In The Night Airglow. Nature 1981, 291, 398-399.
The Rate Of Reaction Of Methyl Radicals With Ozone. International Journal of Chemical Kinetics 1981, 13, 667-675.
1980
Deactivation Of O2(A3-Sigma-U+) By O2, O, And Ar. International Journal of Chemical Kinetics 1980, 12, 501-508.
1979
Excitation Of The Night Airglow On Earth, Venus And Mars. Journal of Photochemistry 1979, 10, 199-204.
1977
Calculation Of Energy-Distribution In Electronic Relaxation Of O2(Sigma-1(G)+) By Diatomic-Molecules. Berichte Der Bunsen-Gesellschaft-Physical Chemistry Chemical Physics 1977, 81, 179-181.
1976
O-2(1Sigmag(+)) Relaxation In Collisions .2. Temperature-Dependence Of Relaxation By Hydrogen. Journal of the Chemical Society-Faraday Transactions Ii 1976, 72, 2075-2081.
O2(Sigma-1(G)+) Relaxation In Collisions - Temperature-Dependence Of Interaction With Hbr. Chemical Physics Letters 1976, 42, 158-161.
O-2(1Sigmag(+) Relaxation In Collisions .1. Influence Of Long-Range Forces In Quenching By Diatomic-Molecules. Journal of Chemical Physics 1976, 65, 771-778.
1975
Infrared-Emission From Gaseous Hnc. Journal of Chemical Physics 1975, 63, 3670-3671.
Temperature-Dependence Of Some Reactions Of Singlet Oxygen With Olefins In Gas-Phase. Journal of the American Chemical Society 1975, 97, 3604-3607.
1974
Arrhenius Parameter For Some Gas-Phase Cycloaddition Reactions Of Singlet Molecular-Oxygen. Canadian Journal of Chemistry-Revue Canadienne De Chimie 1974, 52, 3544-3548.
Quenching Of O2(Sigma-1G+) By Aliphatic-Hydrocarbons. Canadian Journal of Chemistry-Revue Canadienne De Chimie 1974, 52, 240-245.
1969
The Cooperative Emission Bands Of "singlet" Molecular Oxygen. Chemical Physics Letters 1969, 3, 658-660.