Research & Teaching Faculty

Default Header Image

THE PASSIVATION OF GALLIUM-ARSENIDE SURFACES WITH ATOMIC SULFUR

TitleTHE PASSIVATION OF GALLIUM-ARSENIDE SURFACES WITH ATOMIC SULFUR
Publication TypeJournal Article
Year of Publication1992
AuthorsGu, GY, Ogryzlo, EA, Wong, PC, Zhou, MY, Mitchell, KAR
JournalJournal of Applied Physics
Volume72
Pagination762-765
Date PublishedJul
Type of ArticleArticle
ISBN Number0021-8979
KeywordsBONDS, CHEMICAL PASSIVATION, ELECTRONIC-PROPERTIES, GAAS-SURFACES
Abstract

A new technique for bonding sulfur atoms to gallium arsenide surfaces is described. In this technique the surface is exposed to gas-phase atomic sulfur at 60-70-degrees-C. The resulting surfaces were characterized by angle-dependent x-ray photoelectron spectroscopy. The data show that, in contrast to passivation of GaAs by H2S at low temperatures, this technique yields a surface on which the sulfur is almost exclusively bonded only to gallium atoms.

URL<Go to ISI>://A1992JD97100063