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SIMS studies of the effect of H at interfaces formed by oxidized zirconium

TitleSIMS studies of the effect of H at interfaces formed by oxidized zirconium
Publication TypeJournal Article
Year of Publication1998
AuthorsShimizu, K, Flinn, BJ, Wong, PC, Mitchell, KAR
JournalCanadian Journal of Chemistry-Revue Canadienne De Chimie
Date PublishedDec
Type of ArticleArticle
ISBN Number0008-4042
Keywordselectron, GROWTH, HYDROGEN, interfacial reactivity, OXIDATION, OXIDE, oxidized, OXYGEN, secondary ion mass spectrometry, SURFACES, THIN-FILMS, XPS INVESTIGATIONS, ZIRCONIUM, ZR(0001)

Secondary ion mass spectrometry (SIMS) has been used to guide the search for an oxidation procedure that can produce a thin and relatively sharp oxide layer on macroscopic zirconium. A new preparation based on dip coating in H2O2 solution is indicated to be suitable for this purpose. SIMS further indicates that the oxide interface, for such a prepared sample, shows substantial degradation when it is heated in H-2 gas at 300 degrees C. The presence of H appears to facilitate O migration into the metallic region, an observation that supplements those made previously on oxidized thin-film samples of zirconium prepared by deposition under ultrahigh-vacuum conditions.

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