@article {3559,
	title = {Tensor LEED analysis for the Rh(110)-(3x2)-S surface structure},
	journal = {Surface Science},
	volume = {344},
	number = {3},
	year = {1995},
	note = {ISI Document Delivery No.: TQ239Times Cited: 6Cited Reference Count: 26},
	month = {Dec},
	pages = {258-266},
	type = {Article},
	abstract = {A tensor LEED analysis for the Rh(110)-(3 x 2)-S surface supports an arrangement of chemisorbed S atoms at 2/3 monolayer coverage on a basically unreconstructed metallic structure. Alternating [1(1) over bar0$] channels in the metal surface are occupied differently, although each has two S atoms per unit mesh. In one set, the S atoms occupy long-bridge and centre sites with a constant separation along the channel of 4.03 Angstrom. In the other set of channels, all S atoms occupy equivalent positions, displaced from regular centre sites by 0.39 Angstrom, to give successive S to S separations of 3.47 and 4.60 Angstrom. The long-bridge site bonding is a novel feature which is facilitated by the neighbouring topmost Rh atoms relaxing laterally by about 0.27 Angstrom perpendicular to the [1(1) over bar0$] row. Bucklings of 0.20 and 0.10 Angstrom are indicated to occur in the first and second Rh layers respectively; the latter value essentially equals that (0.11 Angstrom) reported earlier for the corresponding half monolayer c(2 x 2) surface. For S atoms at or near centre sites in the (3 x 2) structure, the average S-Rh bond distances are 2.42 and 2.29 Angstrom to the first and second layer Rh atoms respectively; the corresponding values at the long-bridge sites are 2.20 and 2.27 Angstrom.},
	keywords = {chalcogens, chemisorption, CRYSTAL SURFACES, ENERGY-ELECTRON-DIFFRACTION, GENERAL TRENDS, LOW ENERGY ELECTRON DIFFRACTION (LEED), LOW INDEX SINGLE, rhodium, SULFUR ADSORPTION, SURFACE RELAXATION AND RECONSTRUCTION},
	isbn = {0039-6028},
	url = {<Go to ISI>://A1995TQ23900020},
	author = {Wong, K. C. and Liu, W. and Mitchell, K. A. R.}
}
