@article {7132,
	title = {OXIDE THICKNESS EFFECT AND SURFACE ROUGHENING IN THE DESORPTION OF THE OXIDE FROM GAAS},
	journal = {Applied Physics Letters},
	volume = {59},
	number = {4},
	year = {1991},
	note = {ISI Document Delivery No.: FX626Times Cited: 49Cited Reference Count: 10},
	month = {Jul},
	pages = {464-466},
	type = {Article},
	abstract = {The temperature for thermal desorption of the gallium oxide from GaAs is shown to increase linearly with oxide thickness. In addition, we show by diffuse light scattering that highly polished GaAs substrates roughen during the oxide desorption. These results are interpreted in terms of a model in which the oxide evaporates inhomogeneously.},
	keywords = {MOLECULAR-BEAM EPITAXY, RAY PHOTOELECTRON-SPECTROSCOPY},
	isbn = {0003-6951},
	url = {<Go to ISI>://A1991FX62600029},
	author = {Vanbuuren, T. and Weilmeier, M. K. and Athwal, I. and Colbow, K. M. and Mackenzie, J. A. and Tiedje, T. and Wong, P. C. and Mitchell, K. A. R.}
}
