@article {3311,
	title = {KINETIC-STUDY OF ATOMIC-HYDROGEN ETCHING OF GAAS(100)},
	journal = {Journal of Applied Physics},
	volume = {77},
	number = {5},
	year = {1995},
	note = {ISI Document Delivery No.: RC303Times Cited: 3Cited Reference Count: 39},
	month = {Mar},
	pages = {2155-2159},
	type = {Article},
	keywords = {GaAs, GALLIUM-ARSENIDE, H-2, OXIDES, PLASMAS, RATE CONSTANTS, RESONANCE, SI, SILICON, SURFACES},
	isbn = {0021-8979},
	url = {<Go to ISI>://A1995RC30300054},
	author = {Elzey, J. W. and Meharg, P. F. A. and Ogryzlo, E. A.}
}
