@article {471,
	title = {Theoretical Auger electron spectra of polymers by density functional theory calculations using model dimers},
	journal = {Journal of Computational Chemistry},
	volume = {23},
	number = {3},
	year = {2002},
	note = {ISI Document Delivery No.: 516HWTimes Cited: 2Cited Reference Count: 36},
	month = {Feb},
	pages = {394-401},
	type = {Article},
	abstract = {We propose a new approach for analysis of Auger electron spectra (AES) of polymers by density functional theory (DFT) calculations with the Slater{\textquoteright}s transition-state concept. Simulated AES and X-ray photoelectron spectra (XPS) of four polymers [(CH2CH2)(n) (PE), (CH2CH(CH3))(n) (PP), (CH2CH(OCH3))(n) (PVME), and (CH2CH(COCH3))(n) (PVMK)] by DFT calculations using model dimers are in a good accordance with the experimental ones. The experimental AES of the polymers can be classified in each range of ls-2p2p, 1s-2s2p, and 1s-2s2s transitions for CKVV and OKVV spectra, and in individual contributions of the functional groups from the theoretical analysis. (C) 2002 John Wiley Sons, Inc.},
	keywords = {AES, APPROXIMATION, BINDING-ENERGIES, C1S SPECTRA, DFT calculations, LINE-SHAPES, MOLECULES, OLIGOMERS, polymer, RAY PHOTOELECTRON-SPECTRA, SIO2, XPS},
	isbn = {0192-8651},
	url = {<Go to ISI>://000173548700008},
	author = {Otsuka, T. and Koizumi, S. and Endo, K. and Kawabe, H. and Chong, D. P.}
}
@article {3425,
	title = {XPS INVESTIGATIONS OF THE INTERACTIONS OF HYDROGEN WITH THIN-FILMS OF ZIRCONIUM-OXIDE .2. EFFECTS OF HEATING A 26-ANGSTROM THICK-FILM AFTER TREATMENT WITH A HYDROGEN PLASMA},
	journal = {Applied Surface Science},
	volume = {89},
	number = {3},
	year = {1995},
	note = {ISI Document Delivery No.: RG147Times Cited: 32Cited Reference Count: 19},
	month = {Jul},
	pages = {263-269},
	type = {Article},
	abstract = {In order to help establish the role hydrogen plays in the oxidation and reduction of zirconium oxide thin films, XPS was used to study the effects of heating a 26 Angstrom thick ZrO2 film after a hydrogen-plasma treatment. The latter treatment produced a uniform hydrogen-trapped ZrO2 film. Heating to 425 degrees C yielded a reduced suboxide, ZrOx, particularly in the deeper regions of the film, but near the surface this heating produced a zirconium state with Zr3d(5/2) binding energy at 183.4 eV, which is higher than that of ZrO2 by about 0.5 eV. This new chemical state of zirconium appears especially related to Zr-OH bonding. This result, with the observed inhomogeneity of the film, strongly suggests that either H2O or OH- species migrate to the surface region of the hydrogen-trapped ZrO2 film during the heating process.},
	keywords = {AES, EELS, SPECTRA, ZRO2},
	isbn = {0169-4332},
	url = {<Go to ISI>://A1995RG14700006},
	author = {Li, Y. S. and Wong, P. C. and Mitchell, K. A. R.}
}
@article {2928,
	title = {XPS STUDIES OF THE STABILITY AND REACTIVITY OF THIN-FILMS OF OXIDIZED ZIRCONIUM},
	journal = {Applied Surface Science},
	volume = {72},
	number = {3},
	year = {1993},
	note = {ISI Document Delivery No.: MF104Times Cited: 21Cited Reference Count: 32},
	month = {Nov},
	pages = {237-244},
	type = {Article},
	abstract = {X-ray photoelectron spectroscopy (XPS) has been used to characterize thin films formed by the deposition of zirconium on to gold foil. With deposition rates of the order of 1 angstrom min-1, in the presence of an atmosphere of 10(-9) mbar H2O, the film has an outer region Of ZrO2 and inner regions of a lower oxidation state material, ZrO(x), and Zr-Au alloy. Initially both ZrO(x) and Zr-Au alloy are oxidized by either H2O or O2 at 300-degrees-C, although this process is hindered as the ZrO2 layer gets thicker. However, even with the protective oxide layer, heating in 5 x 10(-7) mbar D2 (with a partial pressure of 10(-9) mbar H2O) can convert ZrO(x) to ZrO2, a reaction apparently facilitated by migrating D atoms.},
	keywords = {ADSORPTION, AES, BINDING-ENERGY SHIFTS, electron, HYDROGEN, OXIDATION, OXYGEN, RAY PHOTOELECTRON-SPECTROSCOPY, SINGLE-CRYSTAL, SURFACES, ZR},
	isbn = {0169-4332},
	url = {<Go to ISI>://A1993MF10400004},
	author = {Wang, Y. M. and Li, Y. S. and Wong, P. C. and Mitchell, K. A. R.}
}
@article {7249,
	title = {LEED CRYSTALLOGRAPHIC STUDIES FOR THE CU(110)-(2 X 3)-N SURFACE-STRUCTURE},
	journal = {Surface Science},
	volume = {271},
	number = {3},
	year = {1992},
	note = {ISI Document Delivery No.: JA639Times Cited: 19Cited Reference Count: 31},
	month = {Jun},
	pages = {519-529},
	type = {Article},
	abstract = {An initial multiple-scattering analysis of LEED intensities has been performed for the Cu(110)-(2 x 3)-N surface structure. R-factor analysis supports neither simple N overlayer models nor models with Cu(100)-type top-layer reconstructions. The best correspondence between calculated and experimental intensities appears with models where every other [001] row is missing, similar to that observed for the Cu(110)-(2 x 1)-O surface. The favoured surface structure has N atoms chemisorbed on long-bridge sites such that chains of (Cu(a)-N-Cu(b)-N-Cu(a))x create a surface analogous to the ideal Cu3N(110) surface, except that every third N atom is missing from the surface chains. There is evidence that lateral displacement of copper atoms from the ideal positions leads to two different N-Cu surface bond lengths with values near 1.83 and 1.90 angstrom. Each N atom also bonds to two Cu atoms in the second layer with equal bond lengths of about 1.88 angstrom.},
	keywords = {ADSORPTION, AES, chemisorption, CU(110)(2X3)-N STRUCTURE, ENERGY ELECTRON-DIFFRACTION, NI(110), NITRIDE, NITROGEN, RECONSTRUCTION, SITE},
	isbn = {0039-6028},
	url = {<Go to ISI>://A1992JA63900025},
	author = {Grimsby, D. T. V. and Zhou, M. Y. and Mitchell, K. A. R.}
}
@article {7325,
	title = {X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF THE INTERACTION OF LOW-ENERGY CARBON-IONS WITH GAAS AND INP},
	journal = {Journal of Vacuum Science \& Technology a-Vacuum Surfaces and Films},
	volume = {10},
	number = {4},
	year = {1992},
	note = {ISI Document Delivery No.: JE681Times Cited: 6Cited Reference Count: 1938TH NATIONAL SYMP OF THE AMERICAN VACUUM SOCNOV 10-15, 1991SEATTLE, WAAMER VACUUM SOCPart 1},
	month = {Jul-Aug},
	pages = {1358-1364},
	type = {Proceedings Paper},
	abstract = {To simulate the low energy ion bombardment that occurs in reactive ion etching (RIE) using alkanes, GaAs and InP were exposed to 20, 100, and 500 eV carbon ions, using a mass-separated carbon ion beam in an ultrahigh vacuum chamber. The InP sample structure consisted of a 40 angstrom ultrathin, epitaxial InP layer on InGaAs. The changes induced by ion bombardment and the effects of subsequent damage-removal treatments were determined by in situ polar-angle dependent x-ray photoelectron spectroscopy. Initially, carbon ion irradiation caused minor sputtering of the semiconductors and preferential removal of the group V constituents, with concurrent formation of carbon-semiconductor phases. The depth of these phases and the extent of the damage increased with increasing bombardment energy. An amorphous carbon residue formed after further bombardment. Several damage removal techniques were applied to the carbon bombarded surfaces. It was found that heating was ineffective in annealing the damage, although surface Fermi level movements were observed. Ozone oxidation did not remove the residual carbon efficiently, yet the underlying semiconductor components were readily oxidized. Hydrogen ion bombardment was effective in removing the carbon bombardment induced damage. The implications of these results for alkane based RIE processes are discussed.},
	keywords = {AES, BOMBARDMENT, COMPOUND SEMICONDUCTORS, DAMAGE, electron},
	isbn = {0734-2101},
	url = {<Go to ISI>://A1992JE68100140},
	author = {Meharg, P. E. A. and Ogryzlo, E. A. and Bello, I. and Lau, W. M.}
}
