@inbook {423,
	title = {Pre-steady-state kinetics of enzymatic reactions studied by electrospray mass spectrometry with on-line rapid-mixing techniques},
	booktitle = {Enzyme Kinetics and Mechanism, Pt F: Detection and Characterization of Enzyme Reaction Intermediates},
	series = {Methods in Enzymology},
	volume = {354},
	year = {2002},
	note = {ISI Document Delivery No.: BV53FTimes Cited: 8Cited Reference Count: 42Review525 B STREET, SUITE 1900, SAN DIEGO, CA 92101-4495 USA},
	pages = {50-64},
	publisher = {Academic Press Inc},
	organization = {Academic Press Inc},
	address = {San Diego},
	keywords = {ACID, BETA-LACTAMASE, CATALYSIS, COMPLEXES, INTERMEDIATE, ION, IONIZATION, MECHANISM, REAL-TIME},
	isbn = {0076-6879},
	url = {<Go to ISI>://000179267700003},
	author = {Konermann, L. and Douglas, D. J.}
}
@article {3350,
	title = {KINETIC-STUDY OF THE EFFECTS OF H, O, N, S, NO, NO2 AND O-2 ON THE SURFACE-STATES OF INGAAS AND GAAS},
	journal = {Journal of the Chemical Society-Faraday Transactions},
	volume = {91},
	number = {18},
	year = {1995},
	note = {ISI Document Delivery No.: RW341Times Cited: 0Cited Reference Count: 34},
	month = {Sep},
	pages = {3021-3026},
	type = {Article},
	abstract = {The photoluminescence intensities (PLIs) from 300 nm layers of In0.53Ga0.47As and GaAs have been used to monitor carrier lifetimes, in situ, during exposure of their surfaces to a number of gaseous species at 25 degrees C. PLIs have been observed to increase by a factor of 30-50 following a few seconds exposure to atomic hydrogen at gas-phase atom densities of ca. 10(13) cm(-3). For both semiconductors the PLI was found to be ca. 40\% lower while the surface was being exposed to these atoms. Additional exposure of the InGaAs to H atoms was found to reduce the PLI from this maximum by a factor of 2-3. Both the InGaAs and GaAs surfaces that had been passivated by hydrogen atoms could be de-passivated in less than a second by exposure to O, N, NO or NO2 at comparable gas-phase densities or, at a much slower rate, by exposure to O-2. The surfaces thus formed could be re-passivated by exposure to atomic hydrogen, but in the case of oxidizing species, the original behaviour of the InGaAs surface could only be restored with an HF wash. X-Ray photoelectron (XP) spectra of the surfaces under all these conditions were found to be indistinguishable. Exposure of the surface to S atoms was found to improve the passivation level of an HCl-washed surface by almost four orders of magnitude.},
	keywords = {HYDROGEN PLASMA PASSIVATION, INP, intensity, PHOTOLUMINESCENCE, REAL-TIME},
	isbn = {0956-5000},
	url = {<Go to ISI>://A1995RW34100009},
	author = {Gu, G. and Li, H. J. and Ogryzlo, E.}
}
