@article {5109,
	title = {Mixing schemes for aqueous dimethyl sulfoxide: Support by X-ray diffraction data},
	journal = {Journal of Solution Chemistry},
	volume = {30},
	number = {10},
	year = {2001},
	note = {ISI Document Delivery No.: 505UTTimes Cited: 19Cited Reference Count: 18},
	month = {Oct},
	pages = {885-893},
	type = {Article},
	abstract = {Aqueous dimethyl sulfoxide (DMSO) was studied by X-ray diffraction at room temperature. The results indicated that there are three distinct composition regions. In the DMSO-rich region, DMSO molecules retain the same molecular arrangement as in the pure, state, while H2O does not show any structural feature. These findings are in the complete agreement with the suggestion by our earlier thermodynamic study on aqueous DMSO.((1)) In the H2O-rich region, there is an indication that DMSO molecules exist as small clusters bound mainly by S=O dipole attraction. Hence, hydrophobic CH3 groups point outward from such a cluster and DMSO acts in effect as a hydrophobic solute. This is also consistent with the findings of our earlier thermodynamic study. In the intermediate region, a gradual change in the radial distribution function with composition was observed.},
	keywords = {aqueous DMSO, DIMETHYLSULFOXIDE, intensity, LIQUID, MIXING SCHEMES, NEUTRON-DIFFRACTION, PARTIAL MOLAR ENTHALPIES, WATER MIXTURES, x-ray diffraction},
	isbn = {0095-9782},
	url = {<Go to ISI>://000172934500003},
	author = {Koga,Yoshikata and Kasahara, Y. and Yoshino, K. and Nishikawa, K.}
}
@article {3350,
	title = {KINETIC-STUDY OF THE EFFECTS OF H, O, N, S, NO, NO2 AND O-2 ON THE SURFACE-STATES OF INGAAS AND GAAS},
	journal = {Journal of the Chemical Society-Faraday Transactions},
	volume = {91},
	number = {18},
	year = {1995},
	note = {ISI Document Delivery No.: RW341Times Cited: 0Cited Reference Count: 34},
	month = {Sep},
	pages = {3021-3026},
	type = {Article},
	abstract = {The photoluminescence intensities (PLIs) from 300 nm layers of In0.53Ga0.47As and GaAs have been used to monitor carrier lifetimes, in situ, during exposure of their surfaces to a number of gaseous species at 25 degrees C. PLIs have been observed to increase by a factor of 30-50 following a few seconds exposure to atomic hydrogen at gas-phase atom densities of ca. 10(13) cm(-3). For both semiconductors the PLI was found to be ca. 40\% lower while the surface was being exposed to these atoms. Additional exposure of the InGaAs to H atoms was found to reduce the PLI from this maximum by a factor of 2-3. Both the InGaAs and GaAs surfaces that had been passivated by hydrogen atoms could be de-passivated in less than a second by exposure to O, N, NO or NO2 at comparable gas-phase densities or, at a much slower rate, by exposure to O-2. The surfaces thus formed could be re-passivated by exposure to atomic hydrogen, but in the case of oxidizing species, the original behaviour of the InGaAs surface could only be restored with an HF wash. X-Ray photoelectron (XP) spectra of the surfaces under all these conditions were found to be indistinguishable. Exposure of the surface to S atoms was found to improve the passivation level of an HCl-washed surface by almost four orders of magnitude.},
	keywords = {HYDROGEN PLASMA PASSIVATION, INP, intensity, PHOTOLUMINESCENCE, REAL-TIME},
	isbn = {0956-5000},
	url = {<Go to ISI>://A1995RW34100009},
	author = {Gu, G. and Li, H. J. and Ogryzlo, E.}
}
