| Title | RATE CONSTANTS FOR THE ETCHING OF GALLIUM-ARSENIDE BY ATOMIC CHLORINE |
| Publication Type | Journal Article |
| Year of Publication | 1991 |
| Authors | Ha, JH, Ogryzlo, EA |
| Journal | Plasma Chemistry and Plasma Processing |
| Volume | 11 |
| Pagination | 311-321 |
| Date Published | Jun |
| Type of Article | Article |
| ISBN Number | 0272-4324 |
| Keywords | EXPERIMENTAL, GaAs, PLASMA ETCHING, RATE CONSTANTS |
| Abstract | Known chlorine atom concentrations were prepared in a discharge flow system and used to etch the (100) face of a gallium arsenide single crystal. The etch rate was monitored by mass spectrometry, laser interferometry, and surface profilometry. In the temperature range from 90 to 160-degrees-C the reaction can be described by the rate law Etch rate = kP(cl) where k = 9 x 10(6+/-0.5) mu-m min-1 Torr-1 e-9+/-1)kcal/RT. |
| URL | <Go to ISI>://A1991FH60600009 |
