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  3. RATE CONSTANTS FOR THE ETCHING OF INTRINSIC AND DOPED POLYCRYSTALLINE SILICON BY BROMINE ATOMS

RATE CONSTANTS FOR THE ETCHING OF INTRINSIC AND DOPED POLYCRYSTALLINE SILICON BY BROMINE ATOMS

TitleRATE CONSTANTS FOR THE ETCHING OF INTRINSIC AND DOPED POLYCRYSTALLINE SILICON BY BROMINE ATOMS
Publication TypeJournal Article
Year of Publication1991
AuthorsWalker, ZH, Ogryzlo, EA
JournalJournal of Applied Physics
Volume69
Pagination2635-2638
Date PublishedFeb
Type of ArticleArticle
ISBN Number0021-8979
KeywordsCHLORINE, FLUORINE, SI, SURFACE
Abstract

{The rate constants for the reaction of bromine atoms with intrinsic and heavily doped n+-type polycrystalline silicon, as well as their temperature dependencies, are reported for the first time. The rate constant for intrinsic silicon is given as k = (4 +/- 2) x 10(7) nm min-1 Torr-1e-(62 +/- 2kJ/mol)/RT and for n+-type silicon with a phosphorus number density of 5 x 10(18) cm-3
URL<Go to ISI>://A1991EZ66400126