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RATE CONSTANTS FOR THE REACTION OF CL ATOMS WITH INTRINSIC AND N+-DOPED POLYCRYSTALLINE SILICON

TitleRATE CONSTANTS FOR THE REACTION OF CL ATOMS WITH INTRINSIC AND N+-DOPED POLYCRYSTALLINE SILICON
Publication TypeJournal Article
Year of Publication1991
AuthorsWalker, ZH, Ogryzlo, EA
JournalJournal of Applied Physics
Volume69
Pagination548-549
Date PublishedJan
Type of ArticleNote
ISBN Number0021-8979
KeywordsCHLORINE, FLUORINE-ATOMS, PRODUCTS
Abstract

The reaction of Cl atoms with intrinsic an n+-doped polycrystalline silicon has been studied at a Cl partial pressure of 0.17 Torr and in the temperature ranges from 150 to 290-degrees-C and 25 to 90-degrees-C for the two materials, respectively. The reaction with n+-doped silicon was observed to proceed 90 times faster than with intrinsic silicon at any given temperature, i.e., within experimental error the difference in the rate constants for the two materials was found to be entirely attributable to a change in the pre-exponential factor, with the activation energy remaining unchanged. The rate constant for the reaction is given by (9 +/- 2) x 10(5) nm min-1 Torr(-1 exp-28.2 +/- 1.2 kJ/mol)/RT for the intrinsic material and (7 +/- 3) x 10(7) nm min-1 Torr exp-(27.8 +/- 1.5 kJ/mol)/RT for the phosphorus doped material with a dopant density of 5 x 10(18) cm-3.

URL<Go to ISI>://A1991ER43000098