Title | OXIDE THICKNESS EFFECT AND SURFACE ROUGHENING IN THE DESORPTION OF THE OXIDE FROM GAAS |
Publication Type | Journal Article |
Year of Publication | 1991 |
Authors | Vanbuuren, T, Weilmeier, MK, Athwal, I, Colbow, KM, Mackenzie, JA, Tiedje, T, Wong, PC, Mitchell, KAR |
Journal | Applied Physics Letters |
Volume | 59 |
Pagination | 464-466 |
Date Published | Jul |
Type of Article | Article |
ISBN Number | 0003-6951 |
Keywords | MOLECULAR-BEAM EPITAXY, RAY PHOTOELECTRON-SPECTROSCOPY |
Abstract | The temperature for thermal desorption of the gallium oxide from GaAs is shown to increase linearly with oxide thickness. In addition, we show by diffuse light scattering that highly polished GaAs substrates roughen during the oxide desorption. These results are interpreted in terms of a model in which the oxide evaporates inhomogeneously. |
URL | <Go to ISI>://A1991FX62600029 |
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